Cite
MLA Citation
Daniel Nagy et al.. “Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness.” Journal of physics, vol. 30, 2018, p. . http://access.bl.uk/ark:/81055/vdc_100087634404.0x00004b
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Daniel Nagy et al.. “Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness.” Journal of physics, vol. 30, 2018, p. . http://access.bl.uk/ark:/81055/vdc_100087634404.0x00004b