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APA Citation
Nagy, D., Aldegunde, M., Elmessary, M. A., García-Loureiro, A. J., Seoane, N., & Kalna, K. (2018). modelling of nanoscale multi-gate transistors affected by atomistic interface roughness. Journal of physics, 30, . http://access.bl.uk/ark:/81055/vdc_100087634404.0x00004b