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HARVARD Citation
Aldana, S. et al. (2017). A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs. Journal of physics. p. . [Online].
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Aldana, S. et al. (2017). A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs. Journal of physics. p. . [Online].