A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs. (24th July 2017)

• Record Type: Journal Article
• Authors: Aldana, S; García-Fernández, P; Rodríguez-Fernández, Alberto; Romero-Zaliz, R; González, M B; Jiménez-Molinos, F; Campabadal, F; Gómez-Campos, F; Roldán, J B
• Is Part Of: Journal of physics. Volume 50:Number 33(2017)
• Publication Date: 2017-07-24
• Subjects: resistive switching memory -- variability -- simulation -- conductive filaments -- kinetic Monte Carlo; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa7939
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO2 /Si-n + unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.