A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures. (12th December 2017)
- Record Type:
- Journal Article
- Title:
- A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures. (12th December 2017)
- Main Title:
- A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures
- Authors:
- Mei, Yang
Xu, Rong-Bin
Xu, Huan
Ying, Lei-Ying
Zheng, Zhi-Wei
Zhang, Bao-Ping
Li, Mo
Zhang, Jian - Abstract:
- Abstract: Thermal characteristics of GaN-based vertical cavity surface emitting lasers (VCSELs) with three typical structures were investigated both theoretically and experimentally. The simulation results based on a steady state quasi three-dimensional cylindrical model show that the thermal resistance ( R th ) is affected by cavity length, mesa size, as well as the bottom distributed Bragg reflector (DBR) size, and the detail further depends on different structures. Among different devices, GaN VCSEL with a hybrid cavity formed by one nitride bottom DBR and another dielectric top DBR is featured with lower R th, which is meanwhile affected strongly by the materials of the epitaxial bottom DBR. The main issues affecting the thermal dissipation in VCSELs with double dielectric DBRs are the bottom dielectric DBR and the dielectric current-confinement layer. To validate the simulation results, GaN-based VCSEL bonded on a copper plate was fabricated. R th of this device was measured and the results agreed well with the simulation. This work provides a better understanding of the thermal characteristics of GaN-based VCSELs and is useful in optimizing the structure design and improving the device performance.
- Is Part Of:
- Semiconductor science and technology. Volume 33:Number 1(2018:Jan.)
- Journal:
- Semiconductor science and technology
- Issue:
- Volume 33:Number 1(2018:Jan.)
- Issue Display:
- Volume 33, Issue 1 (2018)
- Year:
- 2018
- Volume:
- 33
- Issue:
- 1
- Issue Sort Value:
- 2018-0033-0001-0000
- Page Start:
- Page End:
- Publication Date:
- 2017-12-12
- Subjects:
- GaN VCSEL -- thermal analysis -- FEM -- thermal resistance measurement
Semiconductors -- Periodicals
621.38152 - Journal URLs:
- http://iopscience.iop.org/0268-1242/1 ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-6641/aa90aa ↗
- Languages:
- English
- ISSNs:
- 0268-1242
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11053.xml