Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer. (21st May 2018)

• Record Type: Journal Article
• Authors: Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J; Egawa, Takashi
• Is Part Of: Semiconductor science and technology. Volume 33:Number 6(2018:Jun.)
• Publication Date: 2018-05-21
• Subjects: GaN -- vertical -- p-n diode -- Si substrate; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aabb8f
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n − -SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n − -GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μ m-thick n − -GaN drift layer and 3.0 μ m-thick n − -SLS layer exhibited a differential on-resistance of 4.0 Ω · cm 2 and a BV of 839 V.