Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer. (21st May 2018) - Mase, Suguru
Abstract: We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n − -SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n − -GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μ m-thick n − -GaN drift layer and 3.0 μ m-thick n − -SLS layer exhibited a differential on-resistance of 4.0 Ω · cm 2 and a BV of 839 V.