Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. (September 2018)

• Record Type: Journal Article
• Authors: Oualli, M.; Dua, C.; Patard, O.; Altuntas, P.; Piotrowicz, S.; Gamarra, P.; Lacam, C.; Jacquet, J.-C.; Teisseire, L.; Lancereau, D.; Chartier, E.; Potier, C.; Delage, S.L.
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 418
• Page End: 422
• Publication Date: 2018-09
• Subjects: GaN-based HEMT -- Wafer level reliability -- DC step-stress -- HTRB -- HTOL; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.07.142
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper layer of the passivation has a strong impact on the ageing of the devices. When the upper layer is an Al2 O3 Atomic Layer Deposited one, the transistors show a better stability of their electrical parameters than those passivated with the other stacks.