Cite
HARVARD Citation
Oualli, M. et al. (2018). Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. Microelectronics and reliability. pp. 418-422. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Oualli, M. et al. (2018). Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. Microelectronics and reliability. pp. 418-422. [Online].