Radiation robustness of normally-off GaN/HEMT power transistors (COTS). (September 2018)

• Record Type: Journal Article
• Authors: Zerarka, M.; Crepel, O.
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 984
• Page End: 991
• Publication Date: 2018-09
• Subjects: Power transistor -- GaN -- GaN Systems -- Panasonic -- SEE -- Radiation -- Heavy ion; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.07.148
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This work aims to characterize the sensitivity to cosmic radiation of GaN Normally-off commercial technologies used in switching power conversion. It is necessary for the Space, Aeronautics and Automotive industries to characterize the radiation robustness of these new Commercial Off-The-Shelf (COTS) components in the operational and environmental conditions of their applications. Electrical behaviour of normally-off GaN power transistors under heavy ion test campaign is presented to define the cross section, determine the safe operating area (SOA) and analysis the mechanism of Single Event Effects (SEE) in these devices.