Cite
HARVARD Citation
Boige, F. et al. (2018). Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectronics and reliability. pp. 598-603. [Online].
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Boige, F. et al. (2018). Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectronics and reliability. pp. 598-603. [Online].