Cite
HARVARD Citation
Nouguier, D. et al. (2018). New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectronics and reliability. pp. 106-112. [Online].
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Nouguier, D. et al. (2018). New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectronics and reliability. pp. 106-112. [Online].