A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics. Issue 1 (2001)

• Record Type: Journal Article
• Authors: Pennetta, C.; Reggiani, L.; Trefán, Gy.; Cataldo, R.; De Nunzio, G.
• Is Part Of: VLSI design. Volume 13:Issue 1/4(2001)
• Page Start: 363
• Page End: 367
• Publication Date: 2001
• Subjects: Percolation -- Failure -- Healing -- Electromigration -- Dielectric breakdown; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/2001/38657
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : Degradation of thin film interconnects and ultra-thin dielectrics is studied within a stochastic approach based on a percolation technique. The thin film is modelled as a two-dimensional random resistor network at a given temperature and its degradation is characterized by a breaking probability of the single resistor. A recovery of the damage is also allowed so that a steady-state condition can be achieved. The main features of experiments are reproduced. This approach provides a unified description of degradation and failure processes in terms of physical parameters.