1. 2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si. Issue 1 (1998) Authors: Formicone, Gabriele F.; Vasileska, Dragica; Ferry, David K. Journal: VLSI design Issue: Volume 6:Issue 1/4(1998) Page Start: 167 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors. Issue 1 (2001) Authors: Rousseau, M.; De Jaeger, J. C. Journal: VLSI design Issue: Volume 13:Issue 1/4(2001) Page Start: 323 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 3D IC and RF SiPs : advanced stacking and planar solutions for 5G mobility /: advanced stacking and planar solutions for 5G mobility. ([2018]) Authors: Hwang, Lih-Tyng; Horng, Tzyy-sheng Jason Record Type: Book Extent: 1 online resource View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. 3D integration for VLSI systems. (2012) Other Names: Tan, Chuan Seng; Chen, Kuan-Neng; Koester, Steven J Record Type: Book Extent: 1 online resource (viii, 366 pages), illustrations (some color) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. 3D integration in VLSI circuits : implementation technologies and applications /: implementation technologies and applications. (2018) Editors: Sakuma, Katsuyuki Record Type: Book Extent: 1 online resource, illustrations (black and white, and colour) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. 3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices. Issue 1 (2001) Authors: Linton, Thomas D.; Yu, Shaofeng; Shaheed, Reaz Journal: VLSI design Issue: Volume 13:Issue 1/4(2001) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. 3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs. Issue 1 (1998) Authors: Brown, A. R.; Asenov, A.; Barker, J. R. Journal: VLSI design Issue: Volume 8:Issue 1/4(1998) Page Start: 99 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. 3D Simulations of Ultra-small MOSFETs with Real-space Treatment of the Electron – Electron and Electron-ion Interactions. Issue 4 (2000) Authors: Gross, W. J.; Vasileska, D.; Ferry, D. K. Journal: VLSI design Issue: Volume 10:Issue 4(2000) Page Start: 437 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. 9T Full Adder Design in Subthreshold Region. (11th March 2012) Authors: Singh, Shiwani; Sharma, Tripti; Sharma, K. G.; Singh, B. P. Other Names: Silva-Martinez Jose Academic Editor. Journal: VLSI design Issue: Volume 2012(2012) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. A 0.6-V to 1-V Audio ΔΣ Modulator in 65 nm CMOS with 90.2 dB SNDR at 0.6-V. (8th May 2013) Authors: Liu, Liyuan; Li, Dongmei; Wang, Zhihua Other Names: Silva-Martinez Jose Academic Editor. Journal: VLSI design Issue: Volume 2013(2013) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗