Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs. Issue 1 (2001)

• Record Type: Journal Article
• Authors: Amirante, E.; Iannaccone, G.; Pellegrini, B.
• Is Part Of: VLSI design. Volume 13:Issue 1/4(2001)
• Page Start: 425
• Page End: 429
• Publication Date: 2001
• Subjects: Statistical modeling -- Dopant fluctuations -- Deep submicron MOSFETs; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/2001/16196
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : We have performed a three-dimensional statistical simulation of the threshold voltage distribution of deep submicron nMOSFETs, as a function of gate length, doping density, oxide thickness, based on a multigrid non-linear Poisson solver. We compare our results with statistical simulations presented in the literature, and show that essentially only the vertical distribution of dopants has an effect on the standard deviation of the threshold voltage.