Enhancement of carrier mobility in thin Ge layer by Sn co-doping. (13th September 2016)

• Record Type: Journal Article
• Authors: Prucnal, S; Liu, F; Berencén, Y; Vines, L; Bischoff, L; Grenzer, J; Andric, S; Tiagulskyi, S; Pyszniak, K; Turek, M; Drozdziel, A; Helm, M; Zhou, S; Skorupa, W
• Is Part Of: Semiconductor science and technology. Volume 31:Number 10(2016:Oct.)
• Publication Date: 2016-09-13
• Subjects: GeOI -- flash lamp annealing -- ion implantation -- explosive recrystallization; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/10/105012
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.