Cite
HARVARD Citation
Prucnal, S. et al. (n.d.). Enhancement of carrier mobility in thin Ge layer by Sn co-doping. Semiconductor science and technology. p. . [Online].
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Prucnal, S. et al. (n.d.). Enhancement of carrier mobility in thin Ge layer by Sn co-doping. Semiconductor science and technology. p. . [Online].