Ruggedness of 1200 V SiC MPS diodes. Issue 9 (August 2015)

• Record Type: Journal Article
• Authors: Fichtner, S.; Frankeser, S.; Lutz, J.; Rupp, R.; Basler, T.; Gerlach, R.
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 9/10(2015)
• Page Start: 1677
• Page End: 1681
• Publication Date: 2015-08
• Subjects: Ruggedness -- MPS diode -- Schottky diode -- Surge current -- Reverse recovery -- Overcurrent -- SiC -- Silicon carbide; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.06.088
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: SiC merged-pin-Schottky (MPS) diodes possess fast switching ability combined with low losses. Compared to conventional Schottky diodes they also provide a high surge current capability making them rugged against surge current pulses of more than seventeen times the rated current for a 10 ms half-sine pulse. In this paper further aspects of device ruggedness are presented such as the surge current capability of two diodes in parallel and the turn-off behavior at application condition and at overcurrent. It was found that the turn-off characteristics are almost independent from the applied voltage. Further, the diode could withstand turn-off from fifteen times the rated current. Highlights: The surge current ruggedness of 1200 V MPS diodes from Infineon does not degrade in parallel arrangement. The current waveform during turn-off at nominal current is almost independent of the applied voltage. The diode withstands turn-off from fifteen times the rated current with high current and voltage slopes.