Characterizations of high-voltage vertically-stacked GaAs laser power converter *Project supported by the National Natural Science Foundation of China (No. 61604171), the Jiangsu Province Science Foundation for Youths (No. BK20170431), and Zhongtian Technology Group Co. Ltd. (September 2018)

• Record Type: Journal Article
• Authors: Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Li, Kuilong; Dong, Jianrong; Xue, Jiping; Xue, Chi; Ye, Yang
• Is Part Of: Journal of semiconductors. Volume 39:Number 9(2018:Sep.)
• Publication Date: 2018-09
• Subjects: six-junction -- laser power converters (LPCs) -- GaAs; 2560; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/39/9/094006
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Six-junction vertically-stacked GaAs laser power converters (LPCs) with n + -GaAs/p + -Al0.37 Ga0.63 As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage ( I–V ) characteristics under 808 nm laser illumination, and a maximum conversion efficiency η c of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.