Investigation of temperature-dependent small-signal performances of TB SOI MOSFETs*Project supported by the National Natural Science Foundation of China (No. 61331006) and the National Defense Pre-Research Foundation of China (No. 9140A11040114DZ04152). (April 2017)

• Record Type: Journal Article
• Authors: Huang, Yuping; Liu, Jun; Lü, Kai; Chen, Jing
• Is Part Of: Journal of semiconductors. Volume 38:Number 4(2017:Apr.)
• Publication Date: 2017-04
• Subjects: cryogenic -- small-signal AC performance -- PD SOI MOSEFTs; 85.30.De -- 72.30.+q; 2560; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/38/4/044006
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: This paper investigated the temperature dependence of the cryogenic small-signal ac performances of multi-finger partially depleted (PD) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs), with T-gate body contact (TB) structure. The measurement results show that the cut-off frequency increases from 78 GHz at 300 K to 120 GHz at 77 K and the maximum oscillation frequency increases from 54 GHz at 300 K to 80 GHz at 77 K, and these are mainly due to the effect of negative temperature dependence of threshold voltage and transconductance. By using a simple equivalent circuit model, the temperature-dependent small-signal parameters are discussed in detail. The understanding of cryogenic small-signal performance is beneficial to develop the PD SOI MOSFETs integrated circuits for ultra-low temperature applications.