Cite
HARVARD Citation
Yadav, N. et al. (2015). A novel stability and process sensitivity driven model for optimal sized FinFET based SRAM. Microelectronics and reliability. 55 (8), pp. 1131-1143. [Online].
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Yadav, N. et al. (2015). A novel stability and process sensitivity driven model for optimal sized FinFET based SRAM. Microelectronics and reliability. 55 (8), pp. 1131-1143. [Online].