A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process. (9th June 2015)

• Record Type: Journal Article
• Authors: Wang, Qingpeng; Jiang, Ying; Zhang, Jiaqi; Kawaharada, Kazuya; Li, Liuan; Wang, Dejun; Ao, Jin-Ping
• Is Part Of: Semiconductor science and technology. Volume 30:Number 7(2015:Jul.)
• Publication Date: 2015-06-09
• Subjects: self-aligned gate -- GaN MOSFET -- inductively coupled plasma -- low-temperature Ohmic; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/7/075003
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We report a new approach in fabricating a self-aligned gate GaN MOSFET. The fabrication technique is based on a double-layer photoresist (PR) and low-temperature-Ohmic formation process assisted by an inductively coupled plasma (ICP) dry etching process. In this process, the active region was automatically defined by the combination of a subsequently developed positive PR and the existing negative PR pattern. The Al Ohmic electrodes on the ICP-treated active region were formed by a lift-off process followed by 500 °C N2 1 min annealing. The specific contact resistance of 4.8 × 10 −6 Ω cm 2 was obtained in this process. Operation up to a gate bias of 30 V was confirmed. The maximum output current of 98 mA mm −1 and field-effect mobility of 110 cm 2 V −1 s −1 were observed in the device with a gate length of 4 μ m. Some non-ideal effects in this device, including the negative threshold voltage, larger off-state leakage and unsaturated on-state drain current, were also observed and analyzed. Some possible ways to improve the performance of the device were proposed.