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HARVARD Citation
Wang, Q. et al. (n.d.). A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process. Semiconductor science and technology. p. . [Online].
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Wang, Q. et al. (n.d.). A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process. Semiconductor science and technology. p. . [Online].