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HARVARD Citation
Tao, P. et al. (n.d.). Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer. Materials science in semiconductor processing. pp. 291-296. [Online].
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Tao, P. et al. (n.d.). Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer. Materials science in semiconductor processing. pp. 291-296. [Online].