Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer. (January 2016)

• Record Type: Journal Article
• Authors: Tao, Pengcheng; Liang, Hongwei; Xia, Xiaochuan; Chen, Yuanpeng; Yang, Chao; Liu, Jianxun; Zhu, Zhifu; Liu, Yang; Shen, Rensheng; Luo, Yingmin; Zhang, Yuantao; Du, Guotong
• Is Part Of: Materials science in semiconductor processing. Volume 41(2016:Jan.)
• Page Start: 291
• Page End: 296
• Publication Date: 2016-01
• Subjects: SiC -- AlGaN -- SiNx interlayer -- Metal organic chemical vapor deposition; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.09.022
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The crystal quality and stress state of Al0.5 Ga0.5 N epitaxial layers on 6H-SiC wafers by introducing an in-situ deposited SiN x nanomask layer grown by metal-organic chemical vapor deposition (MOCVD) were investigated. A SiN x interlayer with various growth times was inserted to the Al0.5 Ga0.5 N epilayers. The full width at half maximum (FWHM) of X-ray diffraction peaks and the density of etch pits decreased dramatically by the SiN x interlayer, indicating an improved crystalline quality. Also, it was found that the crack density and biaxial tensile stress in the Al0.5 Ga0.5 N film was significantly reduced by in situ SiN x interlayer from optical microscopy, photoluminescence spectra and Raman spectra. Finally, a crack-free 1.8 μm thick Al0.5 Ga0.5 N epilayer grown on 6H-SiC substrate using the optimized SiN x interlayer growth time was obtained.