Al passivation effect at the HfO2/GaAs interface: A first-principles study. (January 2016)

• Record Type: Journal Article
• Authors: Cai, Genwang; Sun, Qiang; Jia, Yu; Liang, Erjun
• Is Part Of: Materials science in semiconductor processing. Volume 41(2016:Jan.)
• Page Start: 1
• Page End: 5
• Publication Date: 2016-01
• Subjects: Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.08.001
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: III–V semiconductor interfacing with high-k dielectrics is critical for the high mobility metal oxide semiconductor field transistor (MOSFET) device. In this work, we utilize first-principles method to explore the electronic structures of the interface GaAs/HfO2 with the presence of Al interfacial defects. The simulation results indicate that Al substitutions & interstitials tend to increase the thermal stability of the interface. Meanwhile, this substitution removes the lower-half gap states of GaAs, partially passivating the interface and consequently suppressing the gap states. Also, we find that the band offset displays a dependence on the point defects of Al replacements of interfacial Hf and Ga.