Cite
HARVARD Citation
Cai, G. et al. (n.d.). Al passivation effect at the HfO2/GaAs interface: A first-principles study. Materials science in semiconductor processing. pp. 1-5. [Online].
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Cai, G. et al. (n.d.). Al passivation effect at the HfO2/GaAs interface: A first-principles study. Materials science in semiconductor processing. pp. 1-5. [Online].