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APA Citation
Azzaz, M., Benoist, A., Vianello, E., Garbin, D., Jalaguier, E., Cagli, C., Charpin, C., Bernasconi, S., Jeannot, S., Dewolf, T., Audoit, G., Guedj, C., Denorme, S., Candelier, P., Fenouillet-Beranger, C., & Perniola, L. (2016). improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. Solid-state electronics, 125, 182–188. http://access.bl.uk/ark:/81055/vdc_100070751932.0x00005d