Cite
HARVARD Citation
Azzaz, M. et al. (2016). Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. Solid-state electronics. pp. 182-188. [Online].
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Azzaz, M. et al. (2016). Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3. Solid-state electronics. pp. 182-188. [Online].