An improved DRBL AlGaN/GaN HEMT with high power added efficiency. (January 2019)

• Record Type: Journal Article
• Authors: Jia, Hujun; Zhu, Shunwei; Hu, Mei; Tong, Yibo; Li, Tao; Yang, Yintang
• Is Part Of: Materials science in semiconductor processing. Volume 89(2019)
• Page Start: 212
• Page End: 215
• Publication Date: 2019-01
• Subjects: GaN -- HEMT -- IDRBL structure -- Power added efficiency; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.09.013
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: An improved DRBL AlGaN/GaN HEMT (IDRBL HEMT) with high power added efficiency is proposed and its mechanism is studied by co-simulation of ADS and TCAD software. The barrier layer on both sides of the gate of the new structure has a recessed layer. The simulation results show that the optimized IDRBL HEMT has a large breakdown voltage, a small gate-source capacitance and a large power added efficiency. The maximum PAE obtained from IDRBL HEMT was 53.30%, while the PAE of DRBL HEMT was 36.02%. Therefore, the HEMT of the IDRBL structure has great application prospects in the microwave and radio frequency fields.