Cite
HARVARD Citation
Jia, H. et al. (2019). An improved DRBL AlGaN/GaN HEMT with high power added efficiency. Materials science in semiconductor processing. pp. 212-215. [Online].
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Jia, H. et al. (2019). An improved DRBL AlGaN/GaN HEMT with high power added efficiency. Materials science in semiconductor processing. pp. 212-215. [Online].