Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors. (January 2016)

• Record Type: Journal Article
• Authors: Ren, Jian; Yan, Dawei; Mou, Wenjie; Zhai, Yang; Yang, Guofeng; Gu, Xiaofeng
• Is Part Of: Microelectronics and reliability. Volume 56(2016)
• Page Start: 34
• Page End: 36
• Publication Date: 2016-01
• Subjects: Lattice-matched InAlN/GaN HEMTs -- Gate leakage degradation -- Step-stress test -- Hot electron model; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.10.025
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper, lattice-matched Pt/Au-In0.17 Al0.83 N/GaN high electron mobility transistors (HEMTs) were fabricated, and the degradation characteristics of the gate leakage current were investigated by drain-to-source voltage ( V DS ) step-stress measurements under the ON, semi-ON, and OFF stress conditions and at different temperatures, respectively. It is found that, (1) there exists a critical value of V DS, beyond which the gate leakage current begins to increase significantly; and (2) the degradation of gate leakage current has a positive temperature coefficient, indicating that high temperature can accelerate the degradation. A hot electron model is used to explain the experimental results, emphasizing that the hot electrons from the channel can induce additional negatively charged defects at the InAlN/GaN interface, which can increase the local electrical field and introduce a thinner surface barrier and finally enhance the vertical leakage current component, leading to the current degradation. Highlights: We fabricate lattice-matched Pt/Au-In0.17 Al0.83 N/GaN HEMTs. A critical V DS is found beyond which InAlN/GaN HEMTs begin to degrade. V GS and temperature play important roles for the degradation. A hot electron model is used to explain the degradation.