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HARVARD Citation
Ren, J. et al. (2016). Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors. Microelectronics and reliability. pp. 34-36. [Online].
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Ren, J. et al. (2016). Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors. Microelectronics and reliability. pp. 34-36. [Online].