Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal. (September 2016)

• Record Type: Journal Article
• Authors: Yuan, Hao; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimeng; Zhang, Yimen; Zhang, Yuming
• Is Part Of: Solid-state electronics. Volume 123(2016)
• Page Start: 58
• Page End: 62
• Publication Date: 2016-09
• Subjects: Floating limiting rings -- Termination -- Breakdown voltage -- SiC; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.05.014
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The key parameters of FLRs termination are analyzed. A near-ideal breakdown voltage of 3.7 kV is achieved. The experimental results show a great agreement with simulated results. Abstract: In this paper, a 4H-SiC Junction Barrier Schottky diode (JBS) with non-uniform floating limiting rings (FLRs) has been investigated and fabricated using n type 4H-SiC epitaxial layer with thickness of 31 μm and doping concentration of 3.3 × 10 15 cm −3 . According to the simulated results, the key parameters of a FLRs design to achieve a high voltage are the minimum space between two adjacent doped rings, spacing growth step and number of rings. The experimental results also show a great agreement with simulated results. Meanwhile, a near-ideal breakdown voltage of 3.7 kV was achieved, which yield around 95% of the parallel-plane breakdown voltage. The forward characteristics show that the fabricated JBS diodes have a forward current density of 210 A/cm 2 at 3 V and a specific on-resistance ( R sp-on ) of 7.58 mΩ cm 2 . Different FLRs parameters have no effect on the forward device performance.