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APA Citation
Le Royer, C., Villalon, A., Hutin, L., Martinie, S., Nguyen, P., Barraud, S., Glowacki, F., Allain, F., Bernier, N., Cristoloveanu, S., & Vinet, M. (2016). fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm. Solid-state electronics, 115, 167–172. http://access.bl.uk/ark:/81055/vdc_100029858301.0x000056