Cite
HARVARD Citation
Le Royer, C. et al. (2016). Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm. Solid-state electronics. pp. 167-172. [Online].
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Le Royer, C. et al. (2016). Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm. Solid-state electronics. pp. 167-172. [Online].