Cite
APA Citation
Jeong, W. J., Kim, T. K., Moon, J. M., Park, M. G., Yoon, Y. G., Hwang, B. W., Choi, W. Y., Shin, M., & Lee, S. (n.d.). germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate. Semiconductor science and technology, 30, . http://access.bl.uk/ark:/81055/vdc_100049368769.0x000001