Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate. (3rd March 2015)

• Record Type: Journal Article
• Authors: Jeong, Woo Jin; Kim, Tae Kyun; Moon, Jung Min; Park, Min Gyu; Yoon, Young Gwang; Hwang, Byeong Woon; Choi, Woo Young; Shin, Mincheol; Lee, Seok-Hee
• Is Part Of: Semiconductor science and technology. Volume 30:Number 3(2015:Mar.)
• Publication Date: 2015-03-03
• Subjects: band-to-band tunneling -- fin field effect transistor -- electron–hole bilayer -- steep subthreshold -- lightly-doped drain-source; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/3/035021
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A germanium tunnel field-effect transistor (TFET) with a bias-induced electron–hole bilayer (EHB) with double gates that are symmetrically arranged and independently biased is simulated. The symmetric double gate scheme is feasible, presenting a simple EHB-TFET structure that is practicable for industrial fabrication. According to simulation results, the improvement of on/off current ratio of ∼10 8 is achieved by inserting a lightly-doped drain-source (LDD) region. Also, fin-type EHB-TFETs show an extremely low average sub-threshold swing of 11 mV/decade over 4 decades at V DD = 0.5 V, and thus are suitable for ultra-low power applications.