Cite
HARVARD Citation
Jeong, W. et al. (n.d.). Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate. Semiconductor science and technology. p. . [Online].
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Jeong, W. et al. (n.d.). Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate. Semiconductor science and technology. p. . [Online].