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HARVARD Citation
Wang, W. et al. (2016). A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. Microelectronics and reliability. pp. 67-69. [Online].
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Wang, W. et al. (2016). A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. Microelectronics and reliability. pp. 67-69. [Online].