A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. (May 2016)

• Record Type: Journal Article
• Authors: Wang, Weiliang; Khan, Karim; Zhang, Xingye; Qin, Haiming; Jiang, Jun; Miao, Lijing; Jiang, Kemin; Wang, Pengjun; Dai, Mingzhi; Chu, Junhao
• Is Part Of: Microelectronics and reliability. Volume 60(2016)
• Page Start: 67
• Page End: 69
• Publication Date: 2016-05
• Subjects: Modeling -- Oxide-based thin film transistors (TFTs) -- Transient DOS; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.12.007
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The modeling of the transient subgap density of states (DOS) for the investigation of trap densities in the oxide-based thin-film transistors is proposed. The study is based on both transient measurements and physical modeling. In history, the subgap DOS modeling of trap densities have been studied according to the static-state current–voltage characteristics or the capacitance–voltage curves. However, the subgap DOS modeling for the transient curves is seldom proposed. In this study, the transient model of subgap DOS is discussed for amorphous In–Ga–Zn–O (a-IGZO) thin films. This model suggests the subgap DOS exhibits a transient behavior with an exponential distribution on the band edge and a Gaussian distribution in the deep gap level. This study could be helpful to understand and optimize the transient electrical properties of a-IGZO TFTs.