Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2. (November 2018)

• Record Type: Journal Article
• Authors: Jung, Woo Suk; Lim, Donghwan; Han, Hoonhee; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Choi, Changhwan
• Is Part Of: Solid-state electronics. Volume 149(2018)
• Page Start: 52
• Page End: 56
• Publication Date: 2018-11
• Subjects: In- situ NH3 plasma passivation -- Interface state density -- GaN MOSCAP; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.08.009
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: In-situ NH3 plasma passivation for Ga-face n-GaN MOS capacitor was done by varying plasma power and exposure time. Improvement in frequency dispersion, ΔVFB, Jg, Cox, and Dit . Residual carbon and sub GaOx are efficiently suppressed and defects are passivated. Abstract: The effects of in-situ NH3 plasma passivation on the interface between atomic layer deposited HfO2 and Ga-face n-GaN substrate in metal-oxidesemiconductor (MOS) devices were investigated by varying plasma power and exposure time and compared with GaN MOS device without plasma passivation. ALD HfO2 -GaN device with in-situ NH3 plasma treatment shows improved electrical characteristics including negligible frequency dispersion at the near flat-band voltage region, lower hysteresis (∼10 mV), suppressed oxide capacitance dispersion in the accumulation (2.2%), lower leakage current density (5.21 × 10 −2 A/cm 2 at 1 V), and low interface state density (Dit ) of ∼6.77 × 10 11 eV −1 cm −2 at Ec -Et = 0.3 eV using an optimized plasma passivation exposure time of 10 min and power of 50 W. These results are attributed that NH3 plasma treatment could eliminate carbon species and detrimental sub-GaOx as well as passivate the surface and bulk defects on GaN caused by Ga-N dissociation.