Cite
HARVARD Citation
Jung, W. et al. (2018). Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2. Solid-state electronics. pp. 52-56. [Online].
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Jung, W. et al. (2018). Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2. Solid-state electronics. pp. 52-56. [Online].