This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Design and implementation of quadrature bandpass sigma-delta modulator used in low-IF RF receiver *Project supported by the National Natural Science Foundation of China (Nos. 61471245, U1201256), the Guangdong Province Foundation (No. 2014B090901031), and the Shenzhen Foundation (Nos. JCYJ20160308095019383, JSGG20150529160945187). (May 2018)
Record Type:
Journal Article
Title:
Design and implementation of quadrature bandpass sigma-delta modulator used in low-IF RF receiver *Project supported by the National Natural Science Foundation of China (Nos. 61471245, U1201256), the Guangdong Province Foundation (No. 2014B090901031), and the Shenzhen Foundation (Nos. JCYJ20160308095019383, JSGG20150529160945187). (May 2018)
Main Title:
Design and implementation of quadrature bandpass sigma-delta modulator used in low-IF RF receiver *Project supported by the National Natural Science Foundation of China (Nos. 61471245, U1201256), the Guangdong Province Foundation (No. 2014B090901031), and the Shenzhen Foundation (Nos. JCYJ20160308095019383, JSGG20150529160945187).
Abstract: This paper presents the design and implementation of quadrature bandpass sigma-delta modulator. A pole movement method for transforming real sigma-delta modulator to a quadrature one is proposed by detailed study of the relationship of noise-shaping center frequency and integrator pole position in sigma-delta modulator. The proposed modulator uses sampling capacitor sharing switched capacitor integrator, and achieves a very small feedback coefficient by a series capacitor network, and those two techniques can dramatically reduce capacitor area. Quantizer output-dependent dummy capacitor load for reference voltage buffer can compensate signal-dependent noise that is caused by load variation. This paper designs a quadrature bandpass Sigma-Delta modulator for 2.4 GHz low IF receivers that achieve 69 dB SNDR at 1 MHz BW and -1 MHz IF with 48 MHz clock. The chip is fabricated with SMIC 0.18 μ m CMOS technology, it achieves a total power current of 2.1 mA, and the chip area is 0.48 mm 2 .