Cite
MLA Citation
Jeng-Hwa Liao et al.. “Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory.” Solid-state electronics, vol. 146, 2018, pp. 39–43. http://access.bl.uk/ark:/81055/vdc_100066509718.0x000051
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Jeng-Hwa Liao et al.. “Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory.” Solid-state electronics, vol. 146, 2018, pp. 39–43. http://access.bl.uk/ark:/81055/vdc_100066509718.0x000051