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APA Citation
Liao, J., Ko, Z., Lin, Y., Lin, H., Hsieh, J., Yang, L., Yang, T., Chen, K., & Lu, C. (2018). improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory. Solid-state electronics, 146, 39–43. http://access.bl.uk/ark:/81055/vdc_100066509718.0x000051