Cite
HARVARD Citation
Liao, J. et al. (2018). Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory. Solid-state electronics. pp. 39-43. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Liao, J. et al. (2018). Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory. Solid-state electronics. pp. 39-43. [Online].