Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPy quantum wells for laser applications. (7th July 2015)

• Record Type: Journal Article
• Authors: Kim, H; Forghani, K; Guan, Y; Luo, G; Anand, A; Morgan, D; Kuech, T F; Mawst, L J; Lingley, Z R; Foran, B J; Sin, Y
• Is Part Of: Semiconductor science and technology. Volume 30:Number 9(2015:Sep.)
• Publication Date: 2015-07-07
• Subjects: dilute-bismide -- quantum well laser -- TEM -- density functional theory -- MOCVD -- epitaxy -- XRD; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/9/094011
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: GaAs1− z Bi z /GaAs1− y P y strained-compensated quantum well (QW) structures for laser applications were grown by metalorganic vapor phase epitaxy. The band offsets for the GaAs1− z Bi z /GaAs1− y P y heterojunction were calculated by the density functional theory, and the design of strain-compensated structures was undertaken by the zero stress analysis. The post-growth thermal annealing of the structures dramatically increases the photoluminescence intensity compared to that from as-grown GaAs1− z Bi z QW samples. Transmission electron microscopy studies verified layer thicknesses as well as the presence of abrupt interfaces in the annealed GaAs1− z Bi z /GaAs1− y P y QW structure. Electroluminescence measurements from ridge-waveguide devices show broad spectral emission characteristics and lasing was not observed up to a current injection of 4 kA cm −2 .