Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPy quantum wells for laser applications. (7th July 2015) - Kim, H
Abstract: GaAs1− z Bi z /GaAs1− y P y strained-compensated quantum well (QW) structures for laser applications were grown by metalorganic vapor phase epitaxy. The band offsets for the GaAs1− z Bi z /GaAs1− y P y heterojunction were calculated by the density functional theory, and the design of strain-compensated structures was undertaken by the zero stress analysis. The post-growth thermal annealing of the structures dramatically increases the photoluminescence intensity compared to that from as-grown GaAs1− z Bi z QW samples. Transmission electron microscopy studies verified layer thicknesses as well as the presence of abrupt interfaces in the annealed GaAs1− z Bi z /GaAs1− y P y QW structure. Electroluminescence measurements from ridge-waveguide devices show broad spectral emission characteristics and lasing was not observed up to a current injection of 4 kA cm −2 .