Cite
MLA Citation
Mengyuan Hua et al.. “Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric.” Physica status solidi, vol. 215, no. 10, 2018, p. n/a. http://access.bl.uk/ark:/81055/vdc_100065991573.0x000005